Journal Article

FZJ-2015-02802

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison

Ahl, J.-P. (Corresponding Author) ; Hertkorn, J. ; Koch, H. ; Galler, B. ; Michel, B. ; Binder, M. ; Holländer, B.FZJ*

2014
Elsevier Amsterdam [u.a.]

This record in other databases:  

Please use a persistent id in citations: doi:10.1016/j.jcrysgro.2014.03.043

Abstract: We compared InGaN- and AlInGaN-layers grown by metal-organic vapor phase epitaxy (MOVPE) in terms of morphology, growth mode and indium incorporation. The growth parameters of the AlInGaN layers only differed from InGaN growth by an additional trimethylaluminum (TMAl) flow. Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS) measurements showed that the indium incorporation in AlInGaN was significantly increased compared to InGaN. Atomic force microscopy (AFM) was used to analyze the morphology and the growth mode. The additional TMAl flow changed the growth mode from a step-flow mode to a 2-dimensional (2D) island nucleation mode, yielding a smoother layer morphology. This behavior can be explained by the low surface mobility of the Al adatoms and their nucleation on terraces between adjacent steps. Step bunching – as observed for InGaN – was avoided during AlInGaN growth. This reduced the AFM root mean square roughness by 40% compared to InGaN. Possible impacts on charge carrier localization in QWs are discussed.

Keyword(s): Energy (1st)

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

---

Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---