Journal Article

PreJuSER-19654

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High-temperature desorption of C60 covalently bound to 6H-SiC(0001)-(3x3)

Posseik, F.FZJ* ; Ksari, Y. ; Giovanelli, L. ; Porte, L. ; Themlin, J.-M.

2011
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/10884  doi:10.1103/PhysRevB.84.075333

Abstract: The desorption or fragmentation temperature of C-60 bound to Si-rich-(3 x 3) and (root 3 x root 3) R30 degrees. reconstructions of 6H-SiC(0001) is investigated using inverse photoemission spectroscopy (IPES) and LEED experiments. On SiC-(3 x 3), C-60 film is found desorbed after annealing at a high temperature of 1140 K, supporting covalent bonding. Meanwhile, the Si tetramers of the (3 x 3) nanostructured substrate are recovered, as can be inferred from the full reappearance of the Mott-Hubbard surface state in the IPE spectra. SiC-(3 x 3) behaves in a singular way among the other semiconducting substrates, which covalently bind to C-60. This remarkable feature is attributed to the low density of Si dangling bonds and to the highly corrugated character of this reconstruction.

Keyword(s): J

Note: This work is supported by the ANR PNANO project MolSIC (ANR-08-P058-36).

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Contributing Institute(s):

1. Funktionale Nanostrukturen an Oberflächen (PGI-3)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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