Journal Article

FZJ-2015-03865

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electric field distribution in biased GaAs microstructures with field-pinning layers

Schmidt, J. C. ; Lisauskas, A. (Corresponding Author) ; Roskos, H. G. ; Demarina, N. (Corresponding Author)FZJ*

2012
Elsevier Science, Academic Press Oxford [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.spmi.2012.08.009

Abstract: Field-pinning layers are an approach to improve the homogeneity of the electric field in a biased semiconductor structure of length above the Kroemer criterion. Building a THz Bloch oscillator with such a structure requires superlattice regions. Nevertheless, GaAs layers are investigated here. We compare different periodic structures (alternating transit and field-pinning layers) via simulating the field distribution. It is shown that the development of propagating Gunn domains is suppressed when field-pinning layers are included, but the homogeneity of the field is still not satisfying for the purpose of building a Bloch gain THz source. Depending on the temperature, intra- and inter-period inhomogeneities occur.

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Contributing Institute(s):

1. Theoretische Nanoelektronik (PGI-2)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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