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| Home > Publications database > Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces |
| Journal Article | PreJuSER-20312 |
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2012
American Institute of Physics
Melville, NY
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Please use a persistent id in citations: doi:10.1063/1.3679139
Abstract: The equilibrium conductance of LaAlO3/SrTiO3 (LAO/STO)-heterointerfaces was investigated at high temperatures (950 K-1100 K) as a function of ambient oxygen partial pressure (pO(2)). Metallic LAO/STO-interfaces were obtained for LAO grown on STO single crystals as well as on STO-buffered (La,Sr)(Al,Ta)O-3 substrates. For both structures, the high temperature sheet carrier density n(S) of the LAO/STO-interface saturates at a value of about 1 x 10(14) cm(-2) for reducing conditions, which indicates the presence of interfacial donor states. A significant decrease of nS is observed at high oxygen partial pressures. According to the defect chemistry model of donor-doped STO, this behavior for oxidizing conditions can be attributed to the formation of Sr-vacancies as charge compensating defects. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679139]
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