Journal Article

PreJuSER-22191

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Antiferromagnetic coupling across silicon regulated by tunneling currents

Gareev, R. R.FZJ* ; Schmid, M.FZJ* ; Vancea, J.FZJ* ; Back, C. H.FZJ* ; Schreiber, R.FZJ* ; Bürgler, D.FZJ* ; Schneider, C. M.FZJ* ; Stromberg, F.FZJ* ; Wende, H.FZJ*

2012
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/7516  doi:10.1063/1.3675872

Abstract: We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy, we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for the collector current corresponding to the parallel alignment of magnetizations rises up with the tunneling current, thus demonstrating stabilization of the antiparallel alignment and increasing antiferromagnetic coupling. We connect the enhancement of antiferromagnetic coupling with local dynamic spin torques mediated by spin-polarized tunneling electrons. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675872]

Keyword(s): J

Note: This work is supported by the Project DFG 9209379.

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Contributing Institute(s):

1. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012

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Database coverage:
; ; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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