Journal Article

FZJ-2015-07281

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Phase-Change and Redox-Based Resistive Switching Memories

Wouters, D. J. (Corresponding author) ; Waser, R.FZJ* ; Wuttig, M.FZJ*

2015
Inst. New York, NY [u.a.]

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Please use a persistent id in citations: doi:10.1109/JPROC.2015.2433311

Abstract: This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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