Journal Article

PreJuSER-30244

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Photon-assisted tunneling versus tunneling of excited electrons in metal-insulator-metal junctions

Thon, A. ; Merschdorf, M. ; Pfeiffer, W. ; Klamroth, T. ; Saalfrank, P. ; Diesing, D.FZJ*

2003
Springer Berlin

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Please use a persistent id in citations: doi:10.1007/s00339-003-2314-2

Abstract: Photocurrent measurements in Ag-Al2O3-Al metal-insulator-metal junctions under illumination with ultra-short laser pulses reveal that tunneling and internal photoemission of excited electrons are the dominating transport mechanisms. Photon-assisted tunneling is observed under rare conditions that depend critically on the preparation of the interface. The comparison of time-resolved two-pulse correlation measurements with model calculations shows that the photon-induced transport of excited electrons is well described using a one-dimensional many-particle model for two coupled metallic leads, whereas a single-particle model for nonresonant excitation in a rectangular double-minimum potential reveals the signature of photon-assisted tunneling.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2003

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Database coverage:
JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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