Journal Article

PreJuSER-30883

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Optical and structural properties of ß-FeSi2 precipitate layers in silicon

Schuller, B.FZJ* ; Carius, R.FZJ* ; Mantl, S.FZJ*

2003
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1966  doi:10.1063/1.1576902

Abstract: Semiconducting iron disilicide (beta-FeSi2) precipitates in silicon were fabricated by ion beam synthesis. The samples were characterized by Raman spectroscopy, transmission electron microscopy, and photoluminescence spectroscopy. By comparison with a beta-FeSi2 single crystal, the silicide precipitates are found to be unstrained in all cases, so there is no correlation between strain and photoluminescence efficiency. Our results indicate that carrier recombination at silicon dislocations is sufficient to explain the photoluminescence in our samples. (C) 2003 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Institut für Photovoltaik (IPV)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)
2. Photovoltaik (E02)

Appears in the scientific report 2003
Notes: This version is available at the following Publisher URL: http://jap.aip.org

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