Coercive field of ultrathin PbZr0.52Ti0.48O3 epitaxial films

Pertsev, N. A.; Kohlstedt, H.; Rodriguez Contreras, J.; Kukhar, A. I.; Hermanns, B.; Waser, R.

doi:10.1063/1.1621731

Journal Article

PreJuSER-32036

Coercive field of ultrathin PbZr0.52Ti0.48O3 epitaxial films

Pertsev, N. A. ; Rodriguez Contreras, J.FZJ* ; Kukhar, A. I. ; Hermanns, B.FZJ* ; Kohlstedt, H.FZJ* ; Waser, R.FZJ*

2003
American Institute of Physics Melville, NY

Applied physics letters 83, 3356 (2003) [10.1063/1.1621731]

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Please use a persistent id in citations: http://hdl.handle.net/2128/1241 doi:10.1063/1.1621731

Abstract: The polarization reversal in single-crystalline ferroelectric films has been investigated experimentally and theoretically. The hysteresis loops were measured for Pb(Zr0.52Ti0.48)O-3 films with thicknesses ranging from 8 to 250 nm. These films were grown epitaxially on SrRuO3 bottom electrodes deposited on SrTiO3 substrates. The measurements using Pt top electrodes showed that the coercive field E-c increases drastically as the film becomes thinner, reaching values as high as E(c)approximate to1200 kV/cm. To understand this observation, we calculated the thermodynamic coercive field E-th of a ferroelectric film as a function of the misfit strain S-m in an epitaxial system and showed that E-th strongly depends on S-m. However, the coercive field of ultrathin films, when measured at high frequencies, exceeds the calculated thermodynamic limit. Since this is impossible for an intrinsic coercive field E-c, we conclude that measurements give an apparent E-c rather than the intrinsic one. An enormous increase of apparent coercive field in ultrathin films may be explained by the presence of a conductive nonferroelectric interface layer. (C) 2003 American Institute of Physics.

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