Journal Article

PreJuSER-40809

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation

Schuller, B.FZJ* ; Carius, R.FZJ* ; Mantl, S.FZJ*

2001
Elsevier [S.l.] @

This record in other databases:  

Please use a persistent id in citations: doi:10.1016/S0167-9317(00)00451-2

Abstract: Semiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon as well as in silicon containing a cavity layer prepared by a hydrogen implant and subsequent rapid thermal annealing. The samples were characterised by photoluminescence, Raman spectroscopy and cross section transmission electron microscopy. We find no significant shifts of the FeSi2 Raman lines, indicating that the iron disilicide precipitates are in the same strain state in all our samples. Furthermore, comparing the 246 cm(-1) FeSi2 Raman line from precipitates and from a buried polycrystalline layer, we conclude that most of the FeSi2 precipitates are unstrained. Consequently, the variation of the photoluminescence in differently prepared samples cannot be due to strain effects in the silicide precipitates. (C) 2001 Elsevier Science B.V. All rights reserved.

Keyword(s): J ; silicide precipitates (auto) ; strain (auto) ; photoluminescence (auto)

Note: Record converted from VDB: 12.11.2012

---

Contributing Institute(s):

1. Institut für Photovoltaik (IPV)
2. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Grundlagen und Technologie von Dünnschichtsolarzellen (30.90.0)
2. Ionentechnik (29.87.0)

Appears in the scientific report 2001

---