Size effects in ultrathin epitaxial ferroelectric heterostructures

Nagarajan, V.; Kim, D. M.; Pan, X. Q.; Waser, R.; Ouyang, J.; Prasertchoung, S.; Eom, C. B.; Ramesh, R.; Tian, W.; Zheng, H.; Zhao, T.; Kohlstedt, H.

doi:10.1063/1.1765742

Journal Article

Size effects in ultrathin epitaxial ferroelectric heterostructures

Nagarajan, V.FZJ* ; Prasertchoung, S. ; Zhao, T. ; Zheng, H. ; Ouyang, J. ; Ramesh, R. ; Tian, W. ; Pan, X. Q. ; Kim, D. M. ; Eom, C. B. ; Kohlstedt, H.FZJ* ; Waser, R.FZJ*

2004
American Institute of Physics Melville, NY

Applied physics letters 84, (2004) [10.1063/1.1765742]

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Please use a persistent id in citations: http://hdl.handle.net/2128/995 doi:10.1063/1.1765742

Abstract: In this letter we report on the effect of thickness scaling in model PbZr0.2Ti0.8O3(PZT)/SrRuO3 heterostructures. Although theoretical models for thickness scaling have been widely reported, direct quantitative experimental data for ultrathin perovskite (<10 nm) films in the presence of real electrodes have still not been reported. In this letter we show a systematic quantitative experimental study of the thickness dependence of switched polarization in (001) epitaxial PZT films, 4 to 80 nm thick. A preliminary model based on a modified Landau Ginzburg approach suggests that the nature of the electrostatics at the ferroelectric-electrode interface plays a significant role in the scaling of ferroelectric thin films. (C) 2004 American Institute of Physics.

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