Journal Article

PreJuSER-53255

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Resistive switching of rose bengal devices: a molecular effect?

Karthäuser, S.FZJ* ; Lüssem, B.FZJ* ; Weides, M.FZJ* ; Alba, M. ; Besmehn, A. ; Oligschlaeger, R. ; Waser, R.FZJ*

2006
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/2261  doi:10.1063/1.2364036

Abstract: The resistive switching behavior of devices consisting of aluminum top electrode, molecular layer (rose bengal), and bottom electrode (zinc oxide and indium tin oxide) is examined. By measuring the current versus voltage dependence of these devices for various frequencies and by systematically varying the composition of the device, we show that the switching is an extrinsic effect that is not primarily dependent on the molecular layer. It is shown that the molecular layer is short circuited by filaments of either zinc oxide or aluminum and that the switching effect is due to a thin layer of aluminum oxide at the zinc oxide/aluminum interface. (c) 2006 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)
3. Zentralabteilung für Chemische Analysen (ZCH)
4. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Notes: This version is available at the following Publisher URL: http://jap.aip.org

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