Journal Article

PreJuSER-53748

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Agglomeration of As antisites in As-rich low-temperature GaAs: Nucleation without a critical nucleus size

Staab, T. E. M. ; Nieminen, R. M. ; Luysberg, M.FZJ* ; Frauenheim, T.

2005
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/1104  doi:10.1103/PhysRevLett.95.125502

Abstract: To investigate the early stages of nucleation and growth of As precipitates in GaAs grown at low substrate temperature, we make use of a self-consistent-charge density-functional based tight-binding method. Since a pair of As antisites already shows a significant binding energy which increases when more As antisites are attached, there is no critical nucleus size. Provided that all excess As has precipitated, the clusters may grow in size since the binding energies increase with increasing agglomeration size. These findings close the gap between experimental investigation of point defects and the detection of nanometer-size precipitates in transmission electron microscopy.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Mikrostrukturforschung (IFF-IMF)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: Nachtrag
Notes: This version is available at the following Publisher URL: http://prl.aps.org

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