Journal Article

PreJuSER-58703

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy

Romanyuk, K.FZJ* ; Myslivecek, J.FZJ* ; Cherepanov, V.FZJ* ; Sekiguchi, T. ; Yoshida, S. ; Itoh, K. M. ; Voigtländer, B.FZJ*

2007
APS College Park, Md.

This record in other databases:  

Please use a persistent id in citations: http://hdl.handle.net/2128/7737  doi:10.1103/PhysRevB.75.241309

Abstract: We demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than 1 mu m at a width of approximate to 4 nm. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

---

Contributing Institute(s):

1. Grenz- und Oberflächen (IBN-3)
2. Center of Nanoelectronic Systems for Information Technology (CNI)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2007

---

Database coverage:
;

---