The influence of copper top electrode on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

Yang, Lin.; Szot, K.; Waser, R.; Kügeler, C.; Rüdiger, A.

doi:10.1063/1.3167810

Journal Article

The influence of copper top electrode on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

Yang, L.FZJ* ; Kügeler, C.FZJ* ; Szot, K.FZJ* ; Rüdiger, A.FZJ* ; Waser, R.FZJ*

2009
American Institute of Physics Melville, NY

Applied physics letters 95, 013109 (2009) [10.1063/1.3167810]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17298 doi:10.1063/1.3167810

Abstract: Titanium dioxide thin films (30 nm) are deposited on platinized substrates by atomic layer deposition and locally studied by conductive atomic force microscopy showing repetitive bipolar resistive switching. Experiments using macroscopic copper top electrodes, which are electroformed, bipolar switched, and removed again from the TiO2-Pt stack, prove the formation of local conductive filaments with bipolar switching properties. The localized filaments can be switched repetitively with a resistance ratio of 30. Our findings underline that Cu diffusion and the formation of filaments are the major mechanism for the resistive switching in Cu/TiO2/Pt cells. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3167810]

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