Journal Article

FZJ-2016-07656

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Interface Engineering to Create a Strong Spin Filter Contact to Silicon

Caspers, C. (Corresponding author) ; Gloskovskii, A. ; Gorgoi, M. ; Besson, C. ; Luysberg, M.FZJ* ; Rushchanskii, K.FZJ* ; Ležaić, M.FZJ* ; Fadley, C. S. ; Drube, W. ; Müller, M.FZJ*

2016
Nature Publishing Group London

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Please use a persistent id in citations: http://hdl.handle.net/2128/13317  doi:10.1038/srep22912

Abstract: Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface: (i) an in situ hydrogen-Si (001) passivation and (ii) the application of oxygen-protective Eu monolayers–without using any additional buffer layers. By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime–and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si (001) in order to create a strong spin filter contact to silicon.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)
2. Quanten-Theorie der Materialien (IAS-1)
3. Quanten-Theorie der Materialien (PGI-1)
4. Elektronische Eigenschaften (PGI-6)
5. JARA-FIT (JARA-FIT)
6. JARA - HPC (JARA-HPC)

Research Program(s):

1. 142 - Controlling Spin-Based Phenomena (POF3-142) (POF3-142)

Appears in the scientific report 2016

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