Journal Article

FZJ-2017-00073

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys

Schulte-Braucks, C. (Corresponding author)FZJ* ; von den Driesch, N.FZJ* ; Glass, S.FZJ* ; Tiedemann, A.FZJ* ; Breuer, U.FZJ* ; Besmehn, A.FZJ* ; Hartmann, J.-M. ; Ikonic, Z. ; Zhao, Q.-T.FZJ* ; Mantl, S.FZJ* ; Buca, D.FZJ*

2016
Soc. Washington, DC

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Please use a persistent id in citations: http://hdl.handle.net/2128/18668  doi:10.1021/acsami.6b02425

Abstract: (Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn binaries, allowing the use of the existing Si technology. Despite the multielemental interface and large Sn content of up to 14 atom %, the HfO2/(Si)GeSn capacitors show small frequency dispersion and stretch-out. The formed TaN/HfO2/(Si)GeSn capacitors present a low leakage current of 2 × 10–8 A/cm2 at −1 V and a high breakdown field of ∼8 MV/cm. For large Sn content SiGeSn/GeSn direct band gap heterostructures, process temperatures below 350 °C are required for integration. We developed an atomic vapor deposition process for TaN metal gate on HfO2 high-k dielectric and validated it by resistivity as well as temperature and frequency dependent capacitance–voltage measurements of capacitors on SiGeSn and GeSn. The densities of interface traps are deduced to be in the low 1012 cm–2 eV–1 range and do not depend on the Sn-concentration. The new processes developed here are compatible with (Si)GeSn integration in large scale applications.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. Analytik (ZEA-3)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)
2. E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) (619509)

Appears in the scientific report 2016

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Database coverage:
; ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; NCBI Molecular Biology Database ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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