Journal Article

FZJ-2017-00163

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer

Taoka, N. (Corresponding author) ; Capellini, G. ; von den Driesch, N.FZJ* ; Buca, D. M.FZJ* ; Zaumseil, P. ; Schubert, M. A. ; Klesse, W. M. ; Montanari, M. ; Schroeder, T. (Corresponding author)

2016
Tokyo

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Please use a persistent id in citations: doi:10.7567/APEX.9.031201

Abstract: A key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed (vd) deposition with vd's of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed (vd = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that vd is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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