Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate

Mikulics, Martin; Kočan, M.; Fox, A.; Hardtdegen, H.; Sofer, Z.; Kordoš, P.; Lüth, H.

doi:10.1016/j.apmt.2017.02.008

Journal Article

FZJ-2017-02120

Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate

Mikulics, M.FZJ* ; Kordoš, P. ; Fox, A.FZJ* ; Kočan, M. ; Lüth, H.FZJ* ; Sofer, Z. (Corresponding author) ; Hardtdegen, H.FZJ*

2017
Elsevier Amsterdam [u.a.]

Applied materials today 7, 134 - 137 (2017) [10.1016/j.apmt.2017.02.008]

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Please use a persistent id in citations: doi:10.1016/j.apmt.2017.02.008

Abstract: In this paper, we present the investigation of AlGaN/GaN heterostructures deposited on metallic/silversubstrates by a novel “combined” two-step epitaxial procedure based on metalorganic vapor phase epi-taxy (MOVPE) and molecular beam epitaxy (MBE). The channel temperature was determined by highlateral and spectral resolution Raman spectroscopy. The characteristics of the structures were comparedto those of conventional AlGaN/GaN layers deposited on sapphire. An improved heat dissipation in themetal substrate based HFETs leads to a significant decrease in channel temperature (−60% at 7 W/mm)and affects the long-term stability of the drain current (±2%) favorably in the whole range under inves-tigation (up to ∼1000 h). Metallic substrates are a viable solution toward highly reliable high-powerdevices and are beneficial to low power electronics as well, where the high integration density also callsfor efficient heat dissipation.

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