Journal Article FZJ-2017-03896

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Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

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2017
American Inst. of Physics Melville, NY

Journal of applied physics 121(20), 205705 - () [10.1063/1.4984117]

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Abstract: We present a comprehensive study on the formation and tuning of the Schottky barrier of NiGeSn metallic alloys on Ge1-xSnx semiconductors. First, the Ni metallization of GeSn is investigated for a wide range of Sn contents (x = 0–0.125). Structural analysis reveals the existence of different poly-crystalline NiGeSn and Ni3(GeSn)5 phases depending on the Sn content. Electrical measurements confirm a low NiGeSn sheet resistance of 12 Ω/□ almost independent of the Sn content. We extracted from Schottky barrier height measurements in NiGeSn/GeSn/NiGeSn metal-semiconductor-metal diodes Schottky barriers for the holes below 0.15 eV. They decrease with the Sn content, thereby confirming NiGeSn as an ideal metal alloy for p-type contacts. Dopant segregation for both p- and n-type dopants is investigated as a technique to effectively modify the Schottky barrier of NiGeSn/GeSn contacts. Secondary ion mass spectroscopy is employed to analyze dopant segregation and reveal its dependence on both the Sn content and biaxial layer strain.

Classification:

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. Analytik (ZEA-3)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)
  2. E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) (619509)

Appears in the scientific report 2017
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Medline ; Embargoed OpenAccess ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; NationallizenzNationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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 Record created 2017-05-31, last modified 2021-01-29


Published on 2017-05-31. Available in OpenAccess from 2018-05-31.:
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