Master Thesis

FZJ-2017-05567

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Atomic layer deposition of Al2O3 towards the in-situ fabrication of gate stacks on GaAs substrates

Karimzadah, S. (Corresponding author)FZJ* ; Lepsa, M. I. (Thesis advisor)FZJ*

2017

Note: Siegen, Masterarbeit, 2017

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

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