Journal Article

FZJ-2018-03170

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells

Aeberhard, U. (Corresponding author)FZJ* ; Gonzalo, A. ; Ulloa, J. M.

2018
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/18682  doi:10.1063/1.5030625

Abstract: Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local density of states and the spectral current flow enables the identification of different regimes for carrier localization, transport, and extraction as a function of configurational parameters. These include the number of periods, the thicknesses of the individual layers in one period, the built-in electric field, and the temperature of operation. The results for the carrier extraction efficiency are related to experimental data for different symmetric GaAsSb/GaAsN type-II quantum well superlattice solar cell devices and provide a qualitative explanation for the experimentally observed dependence of photovoltaic device performance on the period thickness.

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Contributing Institute(s):

1. Photovoltaik (IEK-5)
2. JARA - HPC (JARA-HPC)

Research Program(s):

1. 121 - Solar cells of the next generation (POF3-121) (POF3-121)
2. Ab-initio description of charge carrier dynamics at defective interfaces in solar cells (jiek50_20171101) (jiek50_20171101)

Appears in the scientific report 2018

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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