Contribution to a conference proceedings/Contribution to a book

FZJ-2019-00021

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM

Luong, G. V. ; Strangio, S. ; Tiedemann, A.FZJ* ; Bernardy, P.FZJ* ; Trellenkamp, S.FZJ* ; Palestri, P. ; Mantl, S.FZJ* ; Zhao, Q. T. (Corresponding author)FZJ*

2017
IEEE

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Please use a persistent id in citations: doi:10.1109/ESSDERC.2017.8066587

Abstract: Half SRAM cells with strained Si nanowire complementary Tunnel-FETs (CTFET) have been fabricated to explore the capability of TFETs for 6T-SRAM. Static measurements on cells with outward faced n-TFET access transistors have been performed to determine the SRAM butterfly curves, allowing the assessment of cell functionality and stability. The forward p-i-n leakage at certain bias configuration of the access transistor may lead to malfunctioning storage operation, even without the contribution of the ambipolar behavior. Lowering the bit-line bias is found to mitigate such effect resulting in functional hold, read and write operation.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Helmholtz - Nanofacility (HNF)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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