Hauptseite > Publikationsdatenbank > Unveiling Valley Lifetimes of Free Charge Carriers in Monolayer WSe 2 |
Journal Article | FZJ-2020-02148 |
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2020
ACS Publ.
Washington, DC
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Please use a persistent id in citations: http://hdl.handle.net/2128/24935 doi:10.1021/acs.nanolett.9b05138
Abstract: We report on nanosecond-long, gate-dependent valley lifetimes of free charge carriers in monolayer WSe2, unambiguously identified by the combination of time-resolved Kerr rotation and electrical transport measurements. While the valley polarization increases when tuning the Fermi level into the conduction or valence band, there is a strong decrease of the respective valley lifetime consistent with both electron-phonon and spin-orbit scattering. The longest lifetimes are seen for spin-polarized bound excitons in the band gap region. We explain our findings via two distinct, Fermi-level-dependent scattering channels of optically excited, valley-polarized bright trions either via dark or bound states. By electrostatic gating we demonstrate that the transition-metal dichalcogenide WSe2 can be tuned to be either an ideal host for long-lived localized spin states or allow for nanosecond valley lifetimes of free charge carriers (>10 ns).
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