Journal Article FZJ-2020-04205

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Phosphorous Catalytic‐Doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells

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2020
Deutsche Gesellschaft für Materialkunde Frankfurt, M.

Advanced engineering materials 22(6), 1900613 - () [10.1002/adem.201900613]

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Abstract: Herein, the effectiveness of post‐deposition catalytic‐doping (cat‐doping) on various doped silicon alloys, i.e., microcrystalline silicon (μc‐Si:H), nanocrystalline silicon oxide (nc‐SiOx:H), and microcrystalline silicon carbide (μc‐SiC:H), for the use in silicon heterojunction solar cells is investigated. Phosphorous (P) profiles by secondary ion mass spectrometry (SIMS) reveal the P distribution and its difference in these three silicon alloy films. Conductivity and effective charge carrier lifetime of different samples are found to increase to different extents after cat‐doping process. Coexistence of thermal annealing, hydrogenation, and phosphorus doping is confirmed by using different gases during the cat‐doping process.

Classification:

Contributing Institute(s):
  1. Photovoltaik (IEK-5)
Research Program(s):
  1. 121 - Solar cells of the next generation (POF3-121) (POF3-121)

Appears in the scientific report 2020
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Medline ; Creative Commons Attribution CC BY 4.0 ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; DEAL Wiley ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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Dokumenttypen > Aufsätze > Zeitschriftenaufsätze
Institutssammlungen > IMD > IMD-3
Workflowsammlungen > Öffentliche Einträge
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IEK > IEK-5
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 Datensatz erzeugt am 2020-10-30, letzte Änderung am 2024-07-12


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