Journal Article

FZJ-2021-00660

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Studying the switching variability in redox-based resistive switching devices

Abbaspour, E. (Corresponding author) ; Menzel, S.FZJ* ; Jungemann, C.

2020
Springer Science + Business Media B.V. Dordrecht

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Please use a persistent id in citations: http://hdl.handle.net/2128/28638  doi:10.1007/s10825-020-01537-y

Abstract: The variability of switching parameters in redox-based resistive switching RAM (ReRAM) devices is investigated by a 3D kinetic Monte Carlo approach. This physics-based model can simulate the filamentary resistive switching in the electroforming, SET and RESET processes and captures their key features. It allows to predict the impact of the forming and switching conditions on the fluctuations of key parameters like the current and resistance levels of the cell in on and off states. The origin of the variability of the switching parameters was investigated in terms of the involved physical processes. The simulations also confirm the multilevel cell operation capabilities of ReRAM devices.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)
2. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)

Appears in the scientific report 2021

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; DEAL Springer ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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