Journal Article

FZJ-2021-03713

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Optoelectronic devices based on the integration of halide perovskites with silicon-based materials

Liu, J.FZJ* ; Qu, J. ; Kirchartz, T. (Corresponding author)FZJ* ; Song, J. (Corresponding author)

2021
RSC London ˜[u.a.]œ

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Please use a persistent id in citations: http://hdl.handle.net/2128/28712  doi:10.1039/D1TA04527J

Abstract: Halide perovskites are widely used as an absorbing or emitting layer in emerging high-performance optoelectronic devices due to their high absorption coefficients, long charge carrier diffusion lengths, low defect density and intense photoluminescence. Si-based materials (c-Si, a-Si, SixNy, SiCx and SiO2) play important roles in high performance perovskite optoelectronic devices due to the dominance of Si-based microelectronics and the important role of Si-based solar cells in photovoltaics. Controlling the preparation of perovskite materials on the dominant Si optoelectronics platform is a crucial step to realize practical perovskite-based optoelectronic devices. This review highlights the recent progress in Si-based perovskite optoelectronic devices including perovskite/Si tandem solar cells, perovskite/Si photodetectors, perovskite/Si light emitting diodes and optically pumped lasers. The remaining challenge in Si-based perovskite optoelectronic devices research are discussed.

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 1212 - Materials and Interfaces (POF4-121) (POF4-121)

Appears in the scientific report 2021

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Database coverage:
; ; ; Allianz-Lizenz / DFG ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF >= 10 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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