Journal Article

FZJ-2022-02112

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Rotational epitaxy of h-BN on Cu (110)

Herrmann, C. ; Raths, M.FZJ* ; Kumpf, C. (Corresponding author)FZJ* ; Kavanagh, K. L.

2022
Elsevier Amsterdam

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Please use a persistent id in citations: http://hdl.handle.net/2128/32660  doi:10.1016/j.susc.2022.122080

Abstract: The growth of wafer-scale, single-crystalline hexagonal boron nitride (h-BN) monolayers on catalytic metallic substrates, requires a sparse nucleation density. At high temperatures ( C), preparation of vicinal Cu (110) with annealing is reported to provide preferential nucleation of single antiphase domains of h-BN with facets parallel to Cu steps. We have used in situ low-energy electron microscopy (LEEM) to image nucleation and growth of h-BN islands on a Cu (110) single crystal at lower temperatures (650–750)C. With annealing, diffraction (LEED) and dark field imaging (LEEM) confirmed the formation of three sets of h-BN antiphase domains. Two sets are epitaxially aligned with four Cu in-plane directions, the lowest lattice mismatch available. While alignment is excellent in one direction, the other trigonal directions are 10.4 rotationally mismatched. A third pair of antiphase domains nucleates aligned with in-plane directions. These domains are midway, rotated 5.2 with respect to either type of domain, and have the lowest interfacial energy. Localized defects were found to correlate with every island nucleation event.

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Contributing Institute(s):

1. Quantum Nanoscience (PGI-3)

Research Program(s):

1. 5213 - Quantum Nanoscience (POF4-521) (POF4-521)

Appears in the scientific report 2022

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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