Home > Publications database > Transparent Conductive Oxide Sputtering Damage on Contact Passivation in Silicon Heterojunction Solar Cells with Hydrogenated Nanocrystalline Silicon |
Journal Article | FZJ-2022-04511 |
; ; ; ; ; ;
2022
Wiley-VCH
Weinheim
This record in other databases:
Please use a persistent id in citations: http://hdl.handle.net/2128/32701 doi:10.1002/solr.202200651
Abstract: Mitigating the adverse effect of transparent conductive oxide (TCO) sputtering onthe passivation quality of the heterojunction contact is very critical for achievinghigh-efficiency silicon heterojunction (SHJ) solar cells. Herein, n-type ultra-thin(5 nm) nanocrystalline silicon (nc-Si:H) is utilized as a contact layer in rear-junctionSHJ solar cells. It is revealed that the TCO sputtering damage on the contact layer iscaused by the ion bombardment during the sputtering process and cannot be fullyrecovered by low-temperature annealing. A more severe passivation deteriorationis observed for the devices with nc-Si:H(n) having a higher microstructure factor.This result is explained by an increased ion penetration depth in the porous nc-Si:Hfilm. By applying denser nc-Si:H(n) in SHJ solar cells, the front silicon film stackshows more resilience to sputter damage, yielding a remarkable cell performanceon the M2-size wafer with certificated power conversion efficiency (η) of 23.87%.The sputter damage on nc-Si:H by TCO in SHJ solar cells is explored in depth forthe first time from the perspective of silicon thin films.
![]() |
The record appears in these collections: |