Journal Article

FZJ-2023-00960

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy

Fricker, D. (Corresponding author)FZJ*RWTH* ; Atkinson, P. ; Jin, X.FZJ* ; Lepsa, M.FZJ* ; Zeng, Z. ; Kovacs, A.FZJ* ; Kibkalo, L.FZJ* ; Dunin-Borkowski, R.FZJ*RWTH* ; Kardynał, B. (Corresponding author)FZJ*RWTH*

2023
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/1361-6528/acabd1  doi:10.34734/FZJ-2023-00960

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Physik Nanoskaliger Systeme (ER-C-1)

Research Program(s):

1. 5224 - Quantum Networking (POF4-522) (POF4-522)
2. 5351 - Platform for Correlative, In Situ and Operando Characterization (POF4-535) (POF4-535)
3. DFG project 390534769 - EXC 2004: Materie und Licht für Quanteninformation (ML4Q) (390534769) (390534769)

Appears in the scientific report 2024

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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