BMBF 03ZU1106AA
NeuroSys: Memristor Crossbar Architekturen (Projekt A) - A
| Grant period | 2022-01-01 - 2024-12-31 |
| Funding body | Bundesministerium für Bildung und Forschung |
| BMBF | |
| Identifier | G:(BMBF)03ZU1106AA |
All known publications ...
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Journal Article - Online First
Intermediate Resistive State in Wafer‐Scale Vertical MoS 2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
Advanced functional materials 1, e26682 (2026) [10.1002/adfm.202526682]
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Journal Article
Experimental Verification and Evaluation of Non-Stateful Logic Gates in Resistive RAM
IEEE transactions on circuits and systems / 1 72(5), 2029 - 2038 (2025) [10.1109/TCSI.2024.3486376]
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Contribution to a conference proceedings
Effect of Pulse Schemes on Multi-Level Switching and Short-Term Instability in 1T1r Configuration
2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 2025
IEEE 9 pp. (2025) [10.1109/EDTM61175.2025.11040914]
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Conference Presentation (Invited)
Engineering the switching kinetics of valence change memory for neuromorphic computing
Solid State Ionics, LondonLondon, UK, 15 Jul 2024 - 19 Jul 2024
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Poster (Other)
Improved Stateful Logic Designs based on Memristive 1T-1R Arrays
Memrisys, SeoulSeoul, South Korea, 10 Nov 2024 - 13 Nov 2024
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Conference Presentation (Invited)
From nanoionic effects in valence change memories to neuromorphic sensing
Engineering Conferences International, ECI, TaiwanTaiwan, Tainan, 3 Nov 2024 - 8 Nov 2024
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Journal Article
Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design
IEEE transactions on electron devices 71(9), 5345 - 5353 (2024) [10.1109/TED.2024.3427616]
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Conference Presentation (Other)
Experimental Characterization and 1D KMC-Based Simulation of the Reliability of 28 nm BEOL Integrated VCM ReRAM
Materials Research Society Spring Meeting, SeattleSeattle, USA, 22 Apr 2024 - 26 Apr 2024
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Journal Article
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Advanced functional materials 34(15), 2300428 (2024) [10.1002/adfm.202300428]
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Contribution to a conference proceedings
Advanced Electrical Characterization of Memristive Arrays for Neuromorphic Applications
2023 IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence and Neural Engineering (MetroXRAINE), MilanoMilano, Italy, 25 Oct 2023 - 27 Oct 2023
IEEE 1 pp. (2023) [10.1109/MetroXRAINE58569.2023.10405805]
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All known publications ...
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