Conference Presentation (Other)

FZJ-2026-01484

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Advanced CSiGeSn heterostructures for photonic applications

Devaiya, A. J. (Corresponding author)FZJ* ; Concepción, O.FZJ* ; Liu, T.FZJ* ; Seidel, L. ; Bae, J. H.FZJ* ; Tiedemann, A. T.FZJ* ; Mathur, S. ; Oehme, M. ; Capellini, G. ; Grützmacher, D.FZJ* ; Buca, D.FZJ*

2025

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Please use a persistent id in citations: doi:10.34734/FZJ-2026-01484

Abstract: Group IV materials provide a foundational platform for advancing silicon-based photonics applications. Especially, GeSn-based Group-IV alloys have demonstrated a direct band gap with higher electron mobility, which is beneficial for photonic integrated chips (PIC) and spintronic fields with complementary metal-oxide semiconductor (CMOS) compatibility.[1] A recent breakthrough in the Si photonics field was the demonstration of continuous-wave, electrically pumped lasing based on advanced SiGeSn/GeSn multi-quantum well structures (MQWs).[2] In addition, theoretical calculations predict that C substitution into the Ge and GeSn lattice further improves the fundamental bandgap directness, enhancing laser performance.[3] Moreover, incorporating C as well as Si and Sn into Ge allowed a large tunability of the light emission in the Mid-infrared range of 2-5 μm. However, the low solid solubility and large lattice mismatch mostly limit the substitutional incorporation of C into the Ge diamond lattice.

Keyword(s): Basic research (1st) ; Materials Science (2nd)

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)
2. LASTSTEP - group-IV LASer and deTectors on Si-TEchnology Platform (101070208) (101070208)

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Database coverage:

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