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[Zr(NEtMe) 2 (guan-NEtMe) 2 ] as a Novel Atomic Layer Deposition Precursor: ZrO 2 Film Growth and Mechanistic Studies
Blanquart, T. (Corresponding author) ; Niinistö, J. ; Aslam, N.FZJ* ; Banerjee, M. ; Tomczak, Y. ; Gavagnin, M. ; Longo, V. ; Puukilainen, E. ; Wanzenboeck, H. D. ; Kessels, W. M. M. ; Devi, A. ; Hoffmann-Eifert, S.FZJ* ; Ritala, M. ; Leskelä, M.
2013
American Chemical Society
Washington, DC
This record in other databases:
Please use a persistent id in citations: doi:10.1021/cm401279v
Contributing Institute(s):
- Elektronische Materialien (PGI-7)
Research Program(s):
- 424 - Exploratory materials and phenomena (POF2-424) (POF2-424)
Appears in the scientific report
2013
Database coverage:
; BIOSIS Previews ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; Nationallizenz

; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection