Journal Article

FZJ-2015-00484

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance

Tappertzhofen, S. (Corresponding Author) ; Linn, E. ; Bottger, U. ; Waser, R.FZJ* ; Valov, I.FZJ*

2014
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2013.2292113

Abstract: The impact of the recently discovered nanobattery effect on the switching, the endurance, and the retention of resistive random access memory devices is demonstrated. We show that the relaxation of the electromotive force voltage may lead to a shift of the resistance level for high resistive states, which is included into device modeling. Based on the extended memristive device model, which accounts for the nanobattery effects, endurance and retention problems can be explained.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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