Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Gotschke, T.; Calarco, R.; Schumann, T.; Stoica, T.; Limbach, F.

doi:10.1063/1.3559618

Journal Article

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Gotschke, T.FZJ* ; Schumann, T.FZJ* ; Limbach, F.FZJ* ; Stoica, T.FZJ* ; Calarco, R.FZJ*

2011
American Institute of Physics Melville, NY

Applied physics letters 98, 103102 (2011) [10.1063/1.3559618]

This record in other databases:

Please use a persistent id in citations: http://hdl.handle.net/2128/7619 doi:10.1063/1.3559618

Abstract: Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (d(h)) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with d(h) and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559618]

Keyword(s): J

Classification:

Physics, Applied

Note: The authors wish to thank K. H. Deussen for technical support. We furthermore thank R. Hey for a critical reading of the paper. This work was financially supported by the German Ministry of Education and Research project "EPHQUAM" (01BL0904).

Contributing Institute(s):

Research Program(s):