Journal Article

PreJuSER-39770

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png The band-gap of amorphous and well-ordered Al2O3 on Ni3Al(100)

Costina, I.FZJ* ; Franchy, R.FZJ*

2001
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/2158  doi:10.1063/1.1380403

Abstract: The vibrational and electronic properties of amorphous and well-ordered alumina formed on Ni3Al(100) were investigated using high-resolution electron energy loss spectroscopy. The structure of well-ordered alumina was analyzed by low-energy electron diffraction. The amorphous Al2O3 films are prepared by adsorption of O-2 at room temperature, while the well-ordered Al2O3 are obtained by direct oxidation of Ni3Al at 1150 K. The band gap energy is similar to3.2 and similar to4.3 eV for amorphous alumina and well-ordered alumina thin films respectively. The lowering of the band gap with respect to the bulk value of Al2O3 is associated with defect-induced states located in the band gap. (C) 2001 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Grenzflächenaspekte der Informationstechnik (29.35.0)

Appears in the scientific report 2001
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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