Journal Article PreJuSER-41146

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Mononuclear precursor for MOCVD of HfO2 thin films

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2004
Soc. Cambridge

Chemical communications 1610 - 1611 () [10.1039/b405015k]

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Abstract: We report the precursor characteristics of a novel mononuclear mixed alkoxide compound [Hf(O(i)Pr)2(tbaoac)2] and its application towards MOCVD of HfO2 thin films in a production tool CVD reactor.

Keyword(s): J


Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Elektronische Materialien (IFF-IEM)
  2. Center of Nanoelectronic Systems for Information Technology (CNI)
Research Program(s):
  1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2004
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 Record created 2012-11-13, last modified 2020-04-23