One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)

Sekiguchi, T.; Myslivecek, J.; Itoh, K. M.; Voigtländer, B.; Yoshida, S.

doi:10.1063/1.2426890

Journal Article

One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)

Sekiguchi, T. ; Yoshida, S. ; Itoh, K. M. ; Myslivecek, J.FZJ* ; Voigtländer, B.FZJ*

2007
American Institute of Physics Melville, NY

Applied physics letters 90, 013108 (2007) [10.1063/1.2426890]

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Please use a persistent id in citations: http://hdl.handle.net/2128/18083 doi:10.1063/1.2426890

Abstract: Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-defined steps are studied by means of scanning tunneling microscopy and spectroscopy. When the substrate temperature during deposition is around 250 degrees C, Ge nanoclusters of diameters less than 2.0 nm form a one-dimensional array of the periodicity 2.7 nm along each step. This self-organization is due to preferential nucleation of Ge on the unfaulted 7 x 7 half-unit cells at the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters. (c) 2007 American Institute of Physics.

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