Journal Article

PreJuSER-5654

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD

Vincze, A. ; Luptak, R.FZJ* ; Huseková, K. ; Dobrocka, E. ; Fröhlich, K.

2010
Elsevier Science Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.vacuum.2009.05.017

Abstract: We have studied thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection metal-organic chemical vapour deposition (MOCVD). In the present work, we report on the characterization of LaLuO3 and GdScO3 thin dielectric films by SIMS and capacitance-voltage (C-V) measurements. In both GdScO3 and LaLuO3 films, SIMS analysis revealed the presence of a silicate interfacial layer. The C-V characteristics were found to be shifted after thermal treatment to negative and positive voltages for GdScO3 and LaLuO3 films, respectively. Furthermore we have observed that LaLuO3 films exhibit C-V characteristics more stable to annealing conditions compared with GdScO3 films. (C) 2009 Elsevier Ltd. All rights reserved.

Keyword(s): J ; High-kappa Dielectrics (auto) ; C-V measurements (auto) ; Thermal treatment (auto) ; SIMS (auto) ; CET (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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