Contact-mode scanning tunneling microscopy experimental technique employed for tunneling magnetoresistance measurements

Podgursky, V.; Teske, M.; Adam, R.; Krämer, M.; Franchy, R.

doi:10.1063/1.2185152

Journal Article

Contact-mode scanning tunneling microscopy experimental technique employed for tunneling magnetoresistance measurements

Podgursky, V. ; Adam, R.FZJ* ; Teske, M.FZJ* ; Krämer, M.FZJ* ; Franchy, R.FZJ*

2006
American Institute of Physics [S.l.]

Review of scientific instruments 77, 033906 (2006) [10.1063/1.2185152]

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Please use a persistent id in citations: http://hdl.handle.net/2128/16769 doi:10.1063/1.2185152

Abstract: We employed contact-mode scanning tunneling microscopy technique to perform systematic measurements of micrometer-sized Co/Al2O3/Co magnetic tunnel junctions (MTJs). Magnetic multilayer was grown by means of magnetron sputtering, followed by patterning of MTJ on top of FeMn antiferromagnetic bias layer into an array of rectangular mesa structures by standard photolithography. The maximum of 12.5% tunneling magnetoresistance at room temperature was measured for up to 40x40 mu m(2) test MTJs. (c) 2006 American Institute of Physics.

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