Journal Article

FZJ-2016-06393

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers

Liu, L.FZJ* ; Jin, L.FZJ* ; Knoll, L.FZJ* ; Wirths, S.FZJ* ; Buca, D. M.FZJ* ; Mussler, G.FZJ* ; Holländer, B.FZJ* ; Xu, D. ; Di, Z. F. ; Zhang, M. ; Mantl, S.FZJ* ; Zhao, Q.-T. (Corresponding author)FZJ*

2015
Elsevier [S.l.]

This record in other databases:  

Please use a persistent id in citations: doi:10.1016/j.mee.2014.11.022

Abstract: We present a systematic investigation of the formation of Ni germanosilicide layers on strained SiGe/Si(1 0 0) substrates. Homogeneous Ni germanosilicide layers with smooth surface, sharp interface and low sheet resistance are obtained by annealing thin Al/Ni multi-layers on SiGe. The morphology, composition and sheet resistance of the germanosilicide layers are investigated as a function of Al percentage and annealing temperature. Best results of Ni germanosilicide layers are achieved at 400 °C with 20% Al on fully strained SiGe layers with Ge contents of 36 at.% and 45 at.%. The uniform layers show a Ni5(Si1−xGex)3 phase. The compressive strain in the remaining SiGe layer is conserved after germanosilicidation, providing uniform contacts for high hole mobility SiGe layers for device application.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Mikrostrukturforschung (PGI-5)
3. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

---

Database coverage:
; Current Contents - Engineering, Computing and Technology ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---