Journal Article

FZJ-2018-06248

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png In-Gap States and Band-Like Transport in Memristive Devices

Baeumer, C. (Corresponding author)FZJ* ; Funck, C.RWTH* ; Locatelli, A. ; Menteş, T. O. ; Genuzio, F. ; Heisig, T.FZJ* ; Hensling, F.FZJ* ; Raab, N. ; Schneider, C. M.FZJ* ; Menzel, S.FZJ* ; Waser, R.Extern*FZJ* ; Dittmann, R.FZJ*

2019
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/acs.nanolett.8b03023

Abstract: Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectromicroscopy. We find that oxygen vacancies result in in-gap states that we use as input for single-band transport simulations. Because the in-gap states are situated below the Fermi level, they do not contribute to the current directly but impact the shape of the conduction band. Accordingly, we can describe our devices with band-like transport and tunneling across the Schottky barrier at the interface.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2019

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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