Journal Article

FZJ-2020-01763

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure

Sonntag, J. (Corresponding author)FZJ* ; Li, J. ; Plaud, A. ; Loiseau, A. ; Barjon, J. ; Edgar, J. H. ; Stampfer, C.FZJ*

2020
IOP Publ. Bristol

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Please use a persistent id in citations: http://hdl.handle.net/2128/25140  doi:10.1088/2053-1583/ab89e5

Abstract: Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around 10 μm at low temperatures and electron-phonon scattering limited transport at room temperature.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2020

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Database coverage:
; ; ; IF >= 5 ; JCR ; SCOPUS

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