Hauptseite > Publikationsdatenbank > Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys |
Journal Article | FZJ-2020-02872 |
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2020
Nature Publ. Group
London [u.a.]
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Please use a persistent id in citations: http://hdl.handle.net/2128/25606 doi:10.1038/s41566-020-0601-5
Abstract: Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, is transformed via tensile strain engineering into a direct-bandgap semiconductor that supports lasing. In this approach, the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. We observe ultra-low-threshold continuous-wave and pulsed lasing at temperatures up to 70 K and 100 K, respectively. Lasers operating at a wavelength of 2.5 μm have thresholds of 0.8 kW cm−2 for nanosecond pulsed optical excitation and 1.1 kW cm−2 under continuous-wave optical excitation. The results offer a path towards monolithically integrated group IV laser sources on a Si photonics platform.
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