Journal Article

FZJ-2020-03019

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Computational proximity lithography with extreme ultraviolet radiation

Deuter, V. (Corresponding author)FZJ* ; Grochowicz, M.RWTH* ; Brose, S.RWTH* ; Biller, J.FZJ* ; Danylyuk, S. ; Taubner, T.RWTH* ; Siemion, A. ; Grützmacher, D.FZJ* ; Juschkin, L.FZJ*

2020
Soc. Washington, DC

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Please use a persistent id in citations: http://hdl.handle.net/2128/25596  doi:10.1364/OE.398805

Abstract: The potential of extreme ultraviolet (EUV) computational proximity lithography for fabrication of arbitrary nanoscale patterns is investigated. We propose to use a holographic mask (attenuating phase shifting mask) consisting of structures of two phase levels. This approach allows printing of arbitrary, non-periodic structures without using high-resolution imaging optics. The holographic mask is designed for a wavelength of 13.5 nm with a conventional high-resolution electron beam resist as the phase shifting medium (pixel size 50 nm). The imaging performance is evaluated by using EUV radiation with different degrees of spatial coherence. Therefore exposures on identical masks are carried out with both undulator radiation at a synchrotron facility and plasma-based radiation at a laboratory setup.

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Contributing Institute(s):

1. JARA Institut Green IT (PGI-10)
2. Halbleiter-Nanoelektronik (PGI-9)
3. JARA-FIT (JARA-FIT)

Research Program(s):

1. 523 - Controlling Configuration-Based Phenomena (POF3-523) (POF3-523)

Appears in the scientific report 2020

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