IBN-1

Halbleiter-Nanoelektronik
IDI:(DE-Juel1)VDB799

Institut für Halbleiterschichten und Bauelemente    IBN    Halbleiter-Nanoelektronik

Recent Publications

All known publications ...
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Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy
Journal of applied physics 73(11), 7427 - 7430 () [10.1063/1.353984] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes
Journal of physics / D 27, 175 - 178 () [10.1088/0022-3727/27/1/028] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Enhanced Raman Scattering of Ultramarine on Au-coated Ge/Si-nanostructures
Plasmonics 6, 413 - 418 () [10.1007/s11468-011-9219-2] BibTeX | EndNote: XML, Text | RIS

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Spin precession and modulation in ballistic cylindrical nanowires due to the Rashba effect
Physical review / B 83(11), 115305 () [10.1103/PhysRevB.83.115305] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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An Efficient SQUID NDE Defect Detection Approach by Using an Adaptive Finite-Element Modeling
Journal of superconductivity and novel magnetism 24, () [10.1007/s10948-010-0860-3] BibTeX | EndNote: XML, Text | RIS

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CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique
Journal of vacuum science & technology / B 29, 01AB03 () [10.1116/1.3533267] BibTeX | EndNote: XML, Text | RIS

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Flux growth of ZnO crystals doped by transition metals
Journal of crystal growth 314, () [10.1016/j.jcrysgro.2010.11.148] BibTeX | EndNote: XML, Text | RIS

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Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology
Journal of vacuum science & technology / B 29, 01A301 () [10.1116/1.3521374] BibTeX | EndNote: XML, Text | RIS

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Electrical Properties of LaLuO3/Si(100) Structures Prepared by Molecular Beam Deposition
Pennington, NJ : Electrochemical Society (ECS), ECS transactions 33, 221 - 227 () [10.1149/1.3481609] BibTeX | EndNote: XML, Text | RIS

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Electrical characterization of TbScO3/TiN gate stacks in MOS capacitors and MOSFETs on strained and unstrained SOI
Pennington, NJ : Electrochemical Society (ECS), ECS transactions 33, 195 - 202 () [10.1149/1.3481606] BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Datensatz erzeugt am 2012-11-14, letzte Änderung am 2019-10-09


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