IBN-1

Halbleiter-Nanoelektronik
IDI:(DE-Juel1)VDB799

Institut für Halbleiterschichten und Bauelemente    IBN    Halbleiter-Nanoelektronik

Recent Publications

All known publications ...
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Optimization of modulation-doped Ga1- xInxAs/lnP heterostructures towards extremely high mobilities
Journal of applied physics 73(9), 4489 - 4493 () [10.1063/1.352789] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Identification of the Ohmic-contact formation mechanism in the Au/Te/Au/GaAs system
Physical review / B 45(20), 11863 - 11875 () [10.1103/PhysRevB.45.11863] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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A Raman study of Au/Te/Au/GaAs (100) ohmic contacts
Journal of applied physics 71(2), 739 - 743 () [10.1063/1.351336] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Electronic transitions in some phthalocyanine and NH-rhodanine-merocyanine film studied by inelastic-electron-tunneling spectroscopy
Physical review / B 18(8), 4241 - 4249 () OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Magnetotransport and photoluminescence of two-dimensional hole gases in Si/Sil -, Ge, /Si heterostructures
Physical review / B 50(24), 18113 - 18123 () OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Quasi-two-dimensional plasmons of a single 6-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy
Physical review / B 47(7), 3819 - 3826 () OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Porosity superlattices: a new class of Si heterostructures
Journal of physics / D 27, 1333 - 1336 () [10.1088/0022-3727/27/6/035] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy
Journal of applied physics 73(11), 7427 - 7430 () [10.1063/1.353984] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Low- and high-field transport properties of pseudomorphic InxGa1-xAs/lnP (0.73 kleiner gleich x kleiner gleich 0.82) p-type modulation-doped single-quantum-well structures
Journal of applied physics 75(7), 3507 - 3515 () [10.1063/1.356113] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy
Physical review / B 50(11), 7833 - 7837 () OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Datensatz erzeugt am 2012-11-14, letzte Änderung am 2019-10-09


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