BMBF 03ZU1106AA

NeuroSys: Memristor Crossbar Architekturen (Projekt A) - A

Grant period2022-01-01 - 2024-12-31
Funding bodyBundesministerium für Bildung und Forschung
 BMBF
IdentifierG:(BMBF)03ZU1106AA

 

Recent Publications

All known publications ...
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Experimental Verification and Evaluation of Non-Stateful Logic Gates in Resistive RAM
IEEE transactions on circuits and systems / 1 72(5), 2029 - 2038 () [10.1109/TCSI.2024.3486376] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Engineering the switching kinetics of valence change memory for neuromorphic computing
Solid State Ionics, LondonLondon, UK, 15 Jul 2024 - 19 Jul 20242024-07-152024-07-19 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Poster (Other)  ;  ;  ;  ;
Improved Stateful Logic Designs based on Memristive 1T-1R Arrays
Memrisys, SeoulSeoul, South Korea, 10 Nov 2024 - 13 Nov 20242024-11-102024-11-13 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)
From nanoionic effects in valence change memories to neuromorphic sensing
Engineering Conferences International, ECI, TaiwanTaiwan, Tainan, 3 Nov 2024 - 8 Nov 20242024-11-032024-11-08 BibTeX | EndNote: XML, Text | RIS

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Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design
IEEE transactions on electron devices 71(9), 5345 - 5353 () [10.1109/TED.2024.3427616] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Experimental Characterization and 1D KMC-Based Simulation of the Reliability of 28 nm BEOL Integrated VCM ReRAM
Materials Research Society Spring Meeting, SeattleSeattle, USA, 22 Apr 2024 - 26 Apr 20242024-04-222024-04-26 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Advanced functional materials 34(15), 2300428 () [10.1002/adfm.202300428] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings  ;  ;  ;  ;  ;
Advanced Electrical Characterization of Memristive Arrays for Neuromorphic Applications
2023 IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence and Neural Engineering (MetroXRAINE), MilanoMilano, Italy, 25 Oct 2023 - 27 Oct 20232023-10-252023-10-27 IEEE 1 pp. () [10.1109/MetroXRAINE58569.2023.10405805] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)
Modeling of ReRAMs based on the Valence Change Mechanism: From Atomistic to Circuit-Level Models
IEEE 15th International Memory Workshop, IMW, MontereyMonterey, USA, 21 May 2023 - 24 May 20232023-05-212023-05-24 OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure
The journal of physical chemistry / C 127(22), 10878–10887 () [10.1021/acs.jpcc.3c02503] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Record created 2023-03-03, last modified 2025-08-08



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