BMBF 03ZU1106AA
NeuroSys: Memristor Crossbar Architekturen (Projekt A) - A
| Grant period | 2022-01-01 - 2024-12-31 |
| Funding body | Bundesministerium für Bildung und Forschung |
| BMBF | |
| Identifier | G:(BMBF)03ZU1106AA |
All known publications ...
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Journal Article
Reduced Variability in Threshold Switches Using Heterostructures of SiO x and Vertically Aligned MoS 2
Advanced electronic materials 12(7), e00800 (2026) [10.1002/aelm.202500800]
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Journal Article - Online First
Intermediate Resistive State in Wafer‐Scale Vertical MoS 2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
Advanced functional materials 1, e26682 (2026) [10.1002/adfm.202526682]
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Journal Article
Experimental Verification and Evaluation of Non-Stateful Logic Gates in Resistive RAM
IEEE transactions on circuits and systems / 1 72(5), 2029 - 2038 (2025) [10.1109/TCSI.2024.3486376]
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Contribution to a conference proceedings
Effect of Pulse Schemes on Multi-Level Switching and Short-Term Instability in 1T1r Configuration
2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 2025
IEEE 9 pp. (2025) [10.1109/EDTM61175.2025.11040914]
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Conference Presentation (Invited)
Engineering the switching kinetics of valence change memory for neuromorphic computing
Solid State Ionics, LondonLondon, UK, 15 Jul 2024 - 19 Jul 2024
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Poster (Other)
Improved Stateful Logic Designs based on Memristive 1T-1R Arrays
Memrisys, SeoulSeoul, South Korea, 10 Nov 2024 - 13 Nov 2024
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Conference Presentation (Invited)
From nanoionic effects in valence change memories to neuromorphic sensing
Engineering Conferences International, ECI, TaiwanTaiwan, Tainan, 3 Nov 2024 - 8 Nov 2024
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Journal Article
Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design
IEEE transactions on electron devices 71(9), 5345 - 5353 (2024) [10.1109/TED.2024.3427616]
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Conference Presentation (Other)
Experimental Characterization and 1D KMC-Based Simulation of the Reliability of 28 nm BEOL Integrated VCM ReRAM
Materials Research Society Spring Meeting, SeattleSeattle, USA, 22 Apr 2024 - 26 Apr 2024
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Journal Article
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Advanced functional materials 34(15), 2300428 (2024) [10.1002/adfm.202300428]
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All known publications ...
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