Journal Article

PreJuSER-58702

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Identification of Ge/Si intermixing processes at the Bi/Ge/Si(111) surface

Paul, N.FZJ* ; Filimonov, S.FZJ* ; Cherepanov, V.FZJ* ; Cakmak, M. ; Voigtländer, B.FZJ*

2007
APS College Park, Md.

This record in other databases:  

Please use a persistent id in citations: http://hdl.handle.net/2128/7736  doi:10.1103/PhysRevLett.98.166104

Abstract: The chemical contrast between Si and Ge obtained by scanning tunneling microscopy on Bi-covered Si(111) surfaces is used as a tool to identify two vertical Ge/Si intermixing processes. During annealing of an initially pure Ge monolayer on Si, the intermixing is confined to the first two layers approaching a 50% Ge concentration in each layer. During epitaxial growth, a growth front induced intermixing process acting at step edges is observed. Because of the open atomic structure at the step edges, relative to the terraces, a lower activation barrier for intermixing at the step edge, compared to the terrace, is observed.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

---

Contributing Institute(s):

1. Grenz- und Oberflächen (IBN-3)
2. Center of Nanoelectronic Systems for Information Technology (CNI)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2007

---

Database coverage:
;

---