LASTSTEP

group-IV LASer and deTectors on Si-TEchnology Platform

Grant period2023-01-01 - 2026-06-30
Funding bodyEuropean Union
Call numberHORIZON-CL4-2021-DIGITAL-EMERGING-01
Grant number101070208
IdentifierG:(EU-Grant)101070208

Note: Photonics plays a key role in many applications, such as a detection of environmental or toxic gases, analyses of food or health-related products. Those applications depend on the development of highly advanced photonic components working in the mid-infrared (MIR) wavelength range. These components have always been difficult and expensive to make, as they are not compatible with standard microelectronic or photonic fabrication processes. LASTSTEP ambitions to address this issue by developing the world-first all-Group-IV photonic platform using silicon-germanium-tin alloys (SiGeSn). Focusing on the MIR 2-5 µm region essential for sensing of chemical species, the project aims to ensure a wide scale adoption of the developed technology by offering a fully monolithic solution compatible with standard state-of-the-art 200mm CMOS manufacturing processes. The approach will enable cost-effective solutions for sensing, but also for autonomous navigation or consumer products. To achieve this objective, LASTSTEP gathers a world class consortium composed of 3 academic partners, 2 RTOs and 3 industrials. The partners are: -leaders of a CMOS compatible technology for growth and processing of GeSn direct bandgap alloys in an industry-relevant environment - two SMEs well-established on the markets of gas and liquid sensing - world leading PIC design and test-house company to ensure further exploitation of results. LASTSTEP will develop four prototypes based on the fully-group-IV photonic platform for two use-cases. Prototypes will first be assembled from discrete components, then integrated on PICs. LASTSTEP aims to secure for Europe an outstanding position in development and economic exploitation of Si photonics, thereby anticipating maximal return on investment for the EU society. LASTSTEP will bring the decisive further development of Si photonics into a technologically mature MIR platform ready for innovations in the communications, sensing, health, food and safety sector.
   

Recent Publications

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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other)  ;  ;  ;  ;  ;  ;  ;
CSiGeSn Epitaxy: Future Isovalent Isomorphism in Group-IV Materials
16th International WorkShop on New Group IV Semiconductor Nanoelectronics, University of CologneSendai, University of Cologne, Japan, 17 Nov 2025 - 18 Nov 20252025-11-172025-11-18 [10.34734/FZJ-2026-01505] OpenAccess  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other)  ;  ;  ;  ;  ;  ;  ;  ;
GeSn binary alloys for Room Temperature CMOS compatible energy harvesting applications
Fismat 2025, RWTH AachenVenice, RWTH Aachen, Italy, 7 Jul 2025 - 11 Jul 20252025-07-072025-07-11 [10.34734/FZJ-2026-01578] OpenAccess  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other)  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Advanced CSiGeSn heterostructures for photonic applications
the 11th NRW Nano Conference, University of CologneDortmund, University of Cologne, Germany, 30 Sep 2025 - 1 Oct 20252025-09-302025-10-01 [10.34734/FZJ-2026-01484] OpenAccess  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Towards 1-D conduction in gate-defined quantum point contacts on GeSn quantum wells
ASPIRE Workshop on Quantum and Topological Materials Date: October, ASPIRE2025, RWTH AachenSendai, RWTH Aachen, Japan, 21 Oct 2026 - 22 Oct 20262026-10-212026-10-22 [10.34734/FZJ-2026-01474] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (After Call)  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Characterization of a two-dimensional hole gas in a GeSn quantum well system
International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting, ICSI/ISTDM 2025, RWTH AachenMachida, Tokyo, RWTH Aachen, Japan, 10 Nov 2025 - 13 Nov 20252025-11-102025-11-13  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;
Shedding light on epitaxial SiGeSn alloys with Raman spectroscopy: local order and thermomechanical properties
Journal of physics / Condensed matter 37(49), 493002 - () [10.1088/1361-648X/ae1c0b] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;
Luminescence properties of GeSn laser materials: Influence of buffered substrates
Journal of applied physics 138(10), 105701 () [10.1063/5.0281958] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other)  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Magneto-transport Characterization of GeSn for Spintronics Applications
2024 International Conference on Solid State Devices and Materials, SSDM2024, RWTH AachenArcrea HIMEJI, RWTH Aachen, Japan, 1 Sep 2024 - 4 Sep 20242024-09-012024-09-04 [10.7567/SSDM.2024.J-3-03]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Datensatz erzeugt am 2023-08-25, letzte Änderung am 2023-08-25



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